Integrated 10-GHz Graphene FET Amplifier

Graphene has unique electrical and mechanical properties which can pave the way for new types of devices microwave applications. However, emerging technologies often have problems with yield still considerable variation in device parameters cause great challenges circuit design. In this paper, we present design development an integrated graphene FET amplifier addressing challenge. A representative was selected from a set then input output matching circuits were designed using negative-image technique. The two-finger GFET gate length 0.5 μm exhibit typical f T xmlns:xlink="http://www.w3.org/1999/xlink">max 35 GHz 37 GHz, respectively. fabricated on high-resistivity silicon substrate together thin film capacitors, airbridges, spiral inductors. record high gain 4.2dB at 10.6GHz measured single transistor stage agrees well simulations. These results indicate significant progress towards active based 2D materials.